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QID4515001
IGBT Module, Dual [Half Bridge], 150 A, 3.5 V, 1.44 kW, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
Product Information
ManufacturerPOWEREX
Manufacturer Part NoQID4515001
Newark Part No.79R2564
Technical Datasheet
Transistor PolarityDual NPN
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current150A
DC Collector Current150A
Collector Emitter Saturation Voltage3.5V
Collector Emitter Saturation Voltage Vce(on)3.5V
Power Dissipation Pd1.44kW
Power Dissipation1.44kW
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo4.5kV
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins8Pins
Collector Emitter Voltage Max4.5kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Dual NPN
Continuous Collector Current
150A
Collector Emitter Saturation Voltage
3.5V
Power Dissipation Pd
1.44kW
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
4.5kV
IGBT Termination
Tab
Collector Emitter Voltage Max
4.5kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
3.5V
Power Dissipation
1.44kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
No. of Pins
8Pins
IGBT Technology
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate