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QID4515001
IGBT Module, Dual [Half Bridge], 150 A, 3.5 V, 1.44 kW, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 22 semaine(s)
Informations produit
FabricantPOWEREX
Réf. FabricantQID4515001
Code Commande79R2564
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual NPN
Continuous Collector Current150A
DC Collector Current150A
Collector Emitter Saturation Voltage Vce(on)3.5V
Collector Emitter Saturation Voltage3.5V
Power Dissipation Pd1.44kW
Power Dissipation1.44kW
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo4.5kV
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins8Pins
IGBT TerminationTab
Collector Emitter Voltage Max4.5kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
3.5V
Power Dissipation Pd
1.44kW
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
8Pins
Collector Emitter Voltage Max
4.5kV
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual NPN
DC Collector Current
150A
Collector Emitter Saturation Voltage
3.5V
Power Dissipation
1.44kW
Collector Emitter Voltage V(br)ceo
4.5kV
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
-
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Non
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit