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QID4515001
IGBT Module, Dual [Half Bridge], 150 A, 3.5 V, 1.44 kW, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 22 semaine(s)
Informations produit
FabricantPOWEREX
Réf. FabricantQID4515001
Code Commande79R2564
Fiche technique
Transistor PolarityDual NPN
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current150A
DC Collector Current150A
Collector Emitter Saturation Voltage3.5V
Collector Emitter Saturation Voltage Vce(on)3.5V
Power Dissipation Pd1.44kW
Power Dissipation1.44kW
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo4.5kV
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins8Pins
Collector Emitter Voltage Max4.5kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
Dual NPN
Continuous Collector Current
150A
Collector Emitter Saturation Voltage
3.5V
Power Dissipation Pd
1.44kW
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
4.5kV
IGBT Termination
Tab
Collector Emitter Voltage Max
4.5kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
3.5V
Power Dissipation
1.44kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
No. of Pins
8Pins
IGBT Technology
-
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Non
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit