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2SB1188T100Q
Bipolar (BJT) Single Transistor, PNP, 32 V, 2 A, 500 mW, SOT-89, Surface Mount
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No Longer Available
Product Information
ManufacturerROHM
Manufacturer Part No2SB1188T100Q
Newark Part No.84R7765
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max32V
Collector Emitter Voltage V(br)ceo32V
DC Collector Current2A
Continuous Collector Current2A
Power Dissipation500mW
Power Dissipation Pd500mW
Transistor Case StyleSOT-89
Transistor MountingSurface Mount
DC Current Gain hFE82hFE
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min82hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The 2SB1188T100Q is a -2A PNP medium-power epitaxial planar Silicon Transistor offers low collector to emitter saturation voltage.
- 2SD1766 Complement
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
32V
Continuous Collector Current
2A
Power Dissipation Pd
500mW
Transistor Mounting
Surface Mount
No. of Pins
3Pins
DC Current Gain hFE Min
82hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
32V
DC Collector Current
2A
Power Dissipation
500mW
Transistor Case Style
SOT-89
DC Current Gain hFE
82hFE
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability