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2SK3018T106
Power MOSFET, N Channel, 30 V, 100 mA, 8 ohm, SOT-323, Surface Mount
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| Quantity | Price |
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| 1+ | $0.091 |
| 10+ | $0.091 |
| 25+ | $0.091 |
| 50+ | $0.091 |
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Product Information
ManufacturerROHM
Manufacturer Part No2SK3018T106
Newark Part No.40P3488
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100mA
Drain Source On State Resistance8ohm
On Resistance Rds(on)8ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4V
Power Dissipation Pd200mW
Gate Source Threshold Voltage Max1.5V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
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Product Overview
The 2SK3018T106 is a N-channel silicon MOSFET offers 30V drain source voltage and ±100mA continuous drain current. It is suitable for use in interfacing, switching applications.
- Low ON-resistance
- Fast switching speed
- 2.5V Low voltage drive makes this device ideal for portable equipment
- Drive circuits can be simple
- Parallel use is easy
Applications
Power Management, Portable Devices, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
8ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100mA
On Resistance Rds(on)
8ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
200mW
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate