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BSM180C12P2E202
Silicon Carbide MOSFET, Chopper, N Channel, 204 A, 1.2 kV, Module
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| Quantity | Price |
|---|---|
| 1+ | $828.900 |
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM180C12P2E202
Newark Part No.88AH6158
Technical Datasheet
MOSFET Module ConfigurationChopper
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id204A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)-
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Power Dissipation Pd1.36kW
Gate Source Threshold Voltage Max4V
Power Dissipation1.36kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Chopper
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
No. of Pins
-
Power Dissipation Pd
1.36kW
Power Dissipation
1.36kW
Product Range
-
Channel Type
N Channel
Continuous Drain Current Id
204A
On Resistance Rds(on)
-
Transistor Case Style
Module
Rds(on) Test Voltage
-
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability