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BSM300D12P2E001
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 300 A, 1.2 kV, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 1+ | $987.530 |
Price for:Each
Minimum: 1
Multiple: 1
$987.53
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM300D12P2E001
Newark Part No.88AH6165
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Transistor PolarityDual N Channel
Continuous Drain Current Id300A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)-
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Power Dissipation Pd1.875kW
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max2.7V
Power Dissipation1.875kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
No. of Pins
-
Rds(on) Test Voltage
-
Power Dissipation
1.875kW
Product Range
-
Channel Type
Dual N Channel
Continuous Drain Current Id
300A
On Resistance Rds(on)
-
Transistor Case Style
Module
Power Dissipation Pd
1.875kW
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability