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SCT2750NYTB
Silicon Carbide MOSFET, Single, N Channel, 6 A, 1.7 kV, 0.75 ohm, TO-268 (D3PAK)
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No Longer Available
Product Information
ManufacturerROHM
Manufacturer Part NoSCT2750NYTB
Newark Part No.28AC1982
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id6A
On Resistance Rds(on)0.75ohm
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance0.75ohm
Transistor Case StyleTO-268 (D3PAK)
No. of Pins2Pins
Power Dissipation Pd57W
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation57W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
On Resistance Rds(on)
0.75ohm
Drain Source On State Resistance
0.75ohm
No. of Pins
2Pins
Rds(on) Test Voltage
18V
Power Dissipation
57W
Product Range
-
SVHC
To Be Advised
MOSFET Module Configuration
Single
Continuous Drain Current Id
6A
Drain Source Voltage Vds
1.7kV
Transistor Case Style
TO-268 (D3PAK)
Power Dissipation Pd
57W
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate