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SCT2750NYTB
Silicon Carbide MOSFET, Single, N Channel, 6 A, 1.7 kV, 0.75 ohm, TO-268 (D3PAK)
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Modèle arrêté
Informations produit
FabricantROHM
Réf. FabricantSCT2750NYTB
Code Commande28AC1982
Fiche technique
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id6A
Drain Source Voltage Vds1.7kV
On Resistance Rds(on)0.75ohm
Drain Source On State Resistance0.75ohm
Transistor Case StyleTO-268 (D3PAK)
Power Dissipation Pd57W
No. of Pins2Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation57W
Operating Temperature Max175°C
Product Range-
MSLMSL 1 - Unlimited
SVHCTo Be Advised
Spécifications techniques
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.7kV
Drain Source On State Resistance
0.75ohm
Power Dissipation Pd
57W
Rds(on) Test Voltage
18V
Power Dissipation
57W
Product Range
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.75ohm
Transistor Case Style
TO-268 (D3PAK)
No. of Pins
2Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit