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SCT3080ALHRC11
Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 0.08 ohm, TO-247N
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| Quantity | Price |
|---|---|
| 1+ | $19.840 |
| 10+ | $18.770 |
| 25+ | $17.700 |
| 50+ | $16.630 |
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Minimum: 1
Multiple: 1
$19.84
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3080ALHRC11
Newark Part No.02AH4685
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds650V
On Resistance Rds(on)0.08ohm
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation Pd134W
Power Dissipation134W
Operating Temperature Max175°C
Product Range-
MSLMSL 1 - Unlimited
SVHCLead (23-Jan-2024)
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5.6V
Power Dissipation
134W
Product Range
-
SVHC
Lead (23-Jan-2024)
Channel Type
N Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.08ohm
Transistor Case Style
TO-247N
Rds(on) Test Voltage
18V
Power Dissipation Pd
134W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability