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SEMIX 253GB176HDC
IGBT Module, Dual, 250 A, 2.45 V, 150 °C, Module
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Available to Order
Manufacturer Standard Lead Time: 27 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX 253GB176HDC
Newark Part No.09J5166
Technical Datasheet
IGBT ConfigurationDual
Transistor PolarityN Channel
DC Collector Current250A
Continuous Collector Current250A
Collector Emitter Saturation Voltage2.45V
Collector Emitter Saturation Voltage Vce(on)1.7kV
Power Dissipation-
Power Dissipation Pd-
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.7kV
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
No. of Pins16Pins
IGBT TechnologyTrench
Collector Emitter Voltage Max1.7kV
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
Dual
DC Collector Current
250A
Collector Emitter Saturation Voltage
2.45V
Power Dissipation
-
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
Trench
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
Continuous Collector Current
250A
Collector Emitter Saturation Voltage Vce(on)
1.7kV
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.7kV
Transistor Case Style
Module
No. of Pins
16Pins
Collector Emitter Voltage Max
1.7kV
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate