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SK15GH063
IGBT Module, H Bridge, 2.7 V, 1.9 kW, SEMITOP 2
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 25 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSK15GH063
Newark Part No.83F5616
Technical Datasheet
IGBT ConfigurationH Bridge
Transistor PolarityN Channel
DC Collector Current-
Continuous Collector Current-
Collector Emitter Saturation Voltage2.7V
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd1.9kW
Power Dissipation1.9kW
Collector Emitter Voltage V(br)ceo600V
Junction Temperature, Tj Max-
Operating Temperature Max-
Transistor Case StyleSEMITOP 2
No. of Pins16Pins
IGBT TerminationPress Fit
Collector Emitter Voltage Max600V
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
H Bridge
DC Collector Current
-
Collector Emitter Saturation Voltage
2.7V
Power Dissipation Pd
1.9kW
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Max
-
No. of Pins
16Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
Continuous Collector Current
-
Collector Emitter Saturation Voltage Vce(on)
2.7V
Power Dissipation
1.9kW
Junction Temperature, Tj Max
-
Transistor Case Style
SEMITOP 2
IGBT Termination
Press Fit
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate