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SK15GH063
IGBT Module, H Bridge, 2.7 V, 1.9 kW, SEMITOP 2
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 25 semaine(s)
Informations produit
FabricantSEMIKRON
Réf. FabricantSK15GH063
Code Commande83F5616
Fiche technique
IGBT ConfigurationH Bridge
Transistor PolarityN Channel
DC Collector Current-
Continuous Collector Current-
Collector Emitter Saturation Voltage2.7V
Collector Emitter Saturation Voltage Vce(on)2.7V
Power Dissipation Pd1.9kW
Power Dissipation1.9kW
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max-
Junction Temperature, Tj Max-
Transistor Case StyleSEMITOP 2
No. of Pins16Pins
IGBT TerminationPress Fit
Collector Emitter Voltage Max600V
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Spécifications techniques
IGBT Configuration
H Bridge
DC Collector Current
-
Collector Emitter Saturation Voltage
2.7V
Power Dissipation Pd
1.9kW
Collector Emitter Voltage V(br)ceo
600V
Junction Temperature, Tj Max
-
No. of Pins
16Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
Continuous Collector Current
-
Collector Emitter Saturation Voltage Vce(on)
2.7V
Power Dissipation
1.9kW
Operating Temperature Max
-
Transistor Case Style
SEMITOP 2
IGBT Termination
Press Fit
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (15-Jun-2015)
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Certificat de conformité du produit