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SKM 100 GB 176 DN
IGBT Module, 130 A, 2.45 V, 150 °C, SEMITRANS 2
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Available to Order
Manufacturer Standard Lead Time: 25 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM 100 GB 176 DN
Newark Part No.88K1185
Technical Datasheet
Transistor PolarityN Channel
IGBT Configuration-
Continuous Collector Current130A
DC Collector Current130A
Collector Emitter Saturation Voltage Vce(on)1.7kV
Collector Emitter Saturation Voltage2.45V
Power Dissipation-
Power Dissipation Pd-
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.7kV
Transistor Case StyleSEMITRANS 2
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.7kV
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
Technical Specifications
Transistor Polarity
N Channel
Continuous Collector Current
130A
Collector Emitter Saturation Voltage Vce(on)
1.7kV
Power Dissipation
-
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.7kV
No. of Pins
7Pins
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
-
DC Collector Current
130A
Collector Emitter Saturation Voltage
2.45V
Power Dissipation Pd
-
Junction Temperature, Tj Max
150°C
Transistor Case Style
SEMITRANS 2
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate