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SKM300GBD12T4
IGBT Module, Dual, 422 A, 1.85 V, 125 °C, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 10+ | $369.030 |
| 25+ | $347.790 |
Price for:Each
Minimum: 12
Multiple: 12
$4,428.36
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM300GBD12T4
Newark Part No.27T8365
Technical Datasheet
IGBT ConfigurationDual
Transistor PolarityDual NPN
DC Collector Current422A
Continuous Collector Current422A
Collector Emitter Saturation Voltage1.85V
Collector Emitter Saturation Voltage Vce(on)1.85V
Power Dissipation Pd-
Power Dissipation-
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max125°C
Junction Temperature, Tj Max125°C
Transistor Case StyleModule
IGBT TerminationStud
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
Dual
DC Collector Current
422A
Collector Emitter Saturation Voltage
1.85V
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature, Tj Max
125°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
Dual NPN
Continuous Collector Current
422A
Collector Emitter Saturation Voltage Vce(on)
1.85V
Power Dissipation
-
Operating Temperature Max
125°C
Transistor Case Style
Module
IGBT Technology
-
Product Range
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate