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2N3866
Bipolar - RF Transistor, NPN, 30 V, 800 MHz, 5 W, 400 mA, TO-39
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No Longer Available
Product Information
ManufacturerSOLID STATE
Manufacturer Part No2N3866
Newark Part No.10P5415
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max30V
Collector Emitter Voltage V(br)ceo30V
Transition Frequency800MHz
Power Dissipation5W
Power Dissipation Pd5W
DC Collector Current400mA
Continuous Collector Current400mA
Transistor Case StyleTO-39
DC Current Gain hFE10hFE
RF Transistor CaseTO-39
No. of Pins3Pins
DC Current Gain hFE Min10hFE
Transistor MountingThrough Hole
Operating Temperature Max-
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N3866 is a NPN silicon Low Power Transistor, designed for VHF and UHF equipments. It is suitable for oscillator and frequency multiplier functions.
- 1W Output Power
Applications
Audio, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
30V
Power Dissipation
5W
DC Collector Current
400mA
Transistor Case Style
TO-39
RF Transistor Case
TO-39
DC Current Gain hFE Min
10hFE
Operating Temperature Max
-
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max
30V
Transition Frequency
800MHz
Power Dissipation Pd
5W
Continuous Collector Current
400mA
DC Current Gain hFE
10hFE
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability