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2N3866
Bipolar - RF Transistor, NPN, 30 V, 800 MHz, 5 W, 400 mA, TO-39
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Modèle arrêté
Informations produit
FabricantSOLID STATE
Réf. Fabricant2N3866
Code Commande10P5415
Fiche technique
Transistor PolarityNPN
Collector Emitter Voltage Max30V
Collector Emitter Voltage V(br)ceo30V
Transition Frequency800MHz
Power Dissipation5W
Power Dissipation Pd5W
DC Collector Current400mA
Continuous Collector Current400mA
Transistor Case StyleTO-39
DC Current Gain hFE10hFE
RF Transistor CaseTO-39
No. of Pins3Pins
DC Current Gain hFE Min10hFE
Transistor MountingThrough Hole
Operating Temperature Max-
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Aperçu du produit
The 2N3866 is a NPN silicon Low Power Transistor, designed for VHF and UHF equipments. It is suitable for oscillator and frequency multiplier functions.
- 1W Output Power
Applications
Audio, Signal Processing
Spécifications techniques
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
30V
Power Dissipation
5W
DC Collector Current
400mA
Transistor Case Style
TO-39
RF Transistor Case
TO-39
DC Current Gain hFE Min
10hFE
Operating Temperature Max
-
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max
30V
Transition Frequency
800MHz
Power Dissipation Pd
5W
Continuous Collector Current
400mA
DC Current Gain hFE
10hFE
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
MSL
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (27-Jun-2024)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit
Traçabilité des produits