Print Page
GD100HFY120C1S
IGBT Module, Half Bridge, 155 A, 2 V, 511 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
4 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $85.140 |
5+ | $83.600 |
10+ | $82.000 |
48+ | $81.190 |
72+ | $80.400 |
120+ | $77.250 |
Price for:Each
Minimum: 1
Multiple: 1
$85.14
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD100HFY120C1S
Newark Part No.93AC7039
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationHalf Bridge
DC Collector Current155A
Continuous Collector Current155A
Collector Emitter Saturation Voltage2V
Collector Emitter Saturation Voltage Vce(on)2V
Power Dissipation Pd511W
Power Dissipation511W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Product Overview
Starpower IGBT Modules and Arrays provide ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. With key features of Trench IGBT technology, maximum junction temperature 175°C and an Isolated copper baseplate using DBC technology.
Technical Specifications
Transistor Polarity
Dual N Channel
DC Collector Current
155A
Collector Emitter Saturation Voltage
2V
Power Dissipation Pd
511W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Half Bridge
Continuous Collector Current
155A
Collector Emitter Saturation Voltage Vce(on)
2V
Power Dissipation
511W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate