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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT30N120
Newark Part No.94X2608
Technical Datasheet
60 In Stock
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1+ | $25.940 |
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10+ | $23.950 |
25+ | $23.950 |
60+ | $23.950 |
120+ | $23.950 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT30N120
Newark Part No.94X2608
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id40A
On Resistance Rds(on)0.08ohm
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleHiP247
No. of Pins3Pins
Power Dissipation Pd270W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.6V
Power Dissipation270W
Operating Temperature Max200°C
Product Range-
Product Overview
The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.
- Very tight variation of on-resistance vs. temperature
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (200°C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
Industrial, Power Management
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
On Resistance Rds(on)
0.08ohm
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Rds(on) Test Voltage
20V
Power Dissipation
270W
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HiP247
Power Dissipation Pd
270W
Gate Source Threshold Voltage Max
2.6V
Operating Temperature Max
200°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate