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SCTH70N120G2V-7
Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.021 ohm, H2PAK
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTH70N120G2V-7
Newark Part No.40AJ8412
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $64.030 |
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Multiple: 1
$64.03
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTH70N120G2V-7
Newark Part No.40AJ8412
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id90A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.021ohm
Drain Source On State Resistance0.021ohm
Transistor Case StyleH2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.45V
Power Dissipation469W
Power Dissipation Pd469W
Operating Temperature Max175°C
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.021ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.45V
Power Dissipation Pd
469W
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
On Resistance Rds(on)
0.021ohm
Transistor Case Style
H2PAK
Rds(on) Test Voltage
18V
Power Dissipation
469W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability