Print Page
STB140NF75T4
Power MOSFET, N Channel, 75 V, 120 A, 0.0075 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB140NF75T4
Newark Part No.33R1104
Product RangeSTripFET III Series
Technical Datasheet
151 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.910 |
| 10+ | $2.810 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.91
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB140NF75T4
Newark Part No.33R1104
Product RangeSTripFET III Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id120A
Drain Source On State Resistance0.0075ohm
On Resistance Rds(on)0.0065ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd310W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET III Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
STB140NF75T4 is a N-channel STripFET™ III power MOSFET. This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Typically suitable for switching application.
- 75V minimum drain-source breakdown voltage (ID = 250µA, VGS =0, TCASE=25°C)
- 2 to 4V gate threshold voltage range ( VDS = VGS, ID = 250µA)
- 0.0065ohm typical static drain-source on resistance (VGS = 10V, ID = 70A)
- 160S typical forward transconductance (VDS = 15V, ID = 70A)
- <0.0075ohm RDS(on)
- 30ns typical turn-on delay time (VDD = 38V, ID = 70A, RG = 4.7ohm, VGS = 10V)
- 120A maximum source-drain current
- 115ns typical reverse recovery time (ISD = 120A, di/dt = 100A/µs, VDD = 35V, Tj = 150°C)
- 450nC typical reverse recovery charge (ISD = 120A, di/dt = 100A/µs, VDD = 35V, Tj = 150°C)
- D²PAK package, maximum operating junction temperature range from -55 to 175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
On Resistance Rds(on)
0.0065ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0075ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
310W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
STripFET III Series
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for STB140NF75T4
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability