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STB15N80K5
MOSFET, N-CH, 800V, 14A, 190W, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB15N80K5
Newark Part No.07AH6945
Product RangeMDmesh K5
Technical Datasheet
1,151 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $9.210 |
| 10+ | $7.500 |
| 25+ | $7.010 |
| 50+ | $6.520 |
| 100+ | $6.040 |
| 250+ | $5.980 |
| 500+ | $5.910 |
| 1000+ | $5.380 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$9.21
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB15N80K5
Newark Part No.07AH6945
Product RangeMDmesh K5
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id14A
On Resistance Rds(on)0.3ohm
Drain Source On State Resistance0.3ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation190W
Power Dissipation Pd190W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh K5
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
0.3ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
190W
No. of Pins
3Pins
Product Range
MDmesh K5
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source On State Resistance
0.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability