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STB37N60DM2AG
MOSFET, N-CH, 600V, 28A, TO263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB37N60DM2AG
Newark Part No.04AJ4702
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $11.170 |
| 10+ | $8.960 |
| 25+ | $8.500 |
| 50+ | $8.020 |
| 100+ | $7.570 |
| 250+ | $7.190 |
| 500+ | $6.820 |
| 1000+ | $6.440 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$11.17
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB37N60DM2AG
Newark Part No.04AJ4702
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id28A
On Resistance Rds(on)0.094ohm
Drain Source On State Resistance0.094ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation210W
Power Dissipation Pd210W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.094ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
210W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
Channel Type
N Channel
Continuous Drain Current Id
28A
Drain Source On State Resistance
0.094ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
210W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability