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STB45N60DM2AG
MOSFET, AEC-Q101, N-CH, 600V, 34A, TO-263
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB45N60DM2AG
Newark Part No.07AH6950
Product RangeMDmesh DM2
Technical Datasheet
Packaging Options
901 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $11.780 |
| 10+ | $9.550 |
| 25+ | $9.190 |
| 50+ | $8.830 |
| 100+ | $8.470 |
| 250+ | $8.190 |
| 500+ | $8.020 |
| 1000+ | $7.870 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$11.78
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB45N60DM2AG
Newark Part No.07AH6950
Product RangeMDmesh DM2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id34A
On Resistance Rds(on)0.085ohm
Drain Source On State Resistance0.085ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation250W
Power Dissipation Pd250W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh DM2
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.085ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
250W
No. of Pins
3Pins
Product Range
MDmesh DM2
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
34A
Drain Source On State Resistance
0.085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
250W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability