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STP45N10F7
Power MOSFET, N Channel, 100 V, 45 A, 0.0145 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP45N10F7
Newark Part No.45AC7725
Product RangeSTripFET F7
Technical Datasheet
56 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.250 |
| 10+ | $1.250 |
| 100+ | $1.150 |
| 500+ | $1.150 |
| 1000+ | $1.060 |
| 3000+ | $1.060 |
| 10000+ | $1.060 |
Price for:Each
Minimum: 1
Multiple: 1
$1.25
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP45N10F7
Newark Part No.45AC7725
Product RangeSTripFET F7
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id45A
On Resistance Rds(on)0.0145ohm
Drain Source On State Resistance0.0145ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd60W
Gate Source Threshold Voltage Max4.5V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET F7
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Applications
Medical
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0145ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
STripFET F7
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
45A
Drain Source On State Resistance
0.0145ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
60W
Power Dissipation
60W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate