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STP7N60M2
Power MOSFET, N Channel, 600 V, 5 A, 0.86 ohm, TO-220, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP7N60M2
Newark Part No.98Y2499
Product RangeMDmesh II Plus
Technical Datasheet
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| 100+ | $0.929 |
| 500+ | $0.928 |
| 1000+ | $0.928 |
| 2500+ | $0.928 |
| 10000+ | $0.858 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP7N60M2
Newark Part No.98Y2499
Product RangeMDmesh II Plus
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id5A
Drain Source On State Resistance0.86ohm
On Resistance Rds(on)0.86ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation60W
Power Dissipation Pd60W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh II Plus
Qualification-
MSL-
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Product Overview
- 600V, 5A N-channel MDmesh™ M2 power MOSFET in 3 pin TO-220 package
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Suitable for switching applications
- Zener protected
- Exhibit low on-resistance and optimized switching characteristics
- Suitable for the most demanding high efficiency converters
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.86ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
60W
No. of Pins
3Pins
Product Range
MDmesh II Plus
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
5A
On Resistance Rds(on)
0.86ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
60W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate