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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTQ1NK60ZR-AP
Newark Part No.33R1297
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTQ1NK60ZR-AP
Newark Part No.33R1297
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id400mA
On Resistance Rds(on)13ohm
Drain Source On State Resistance13ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd3W
Gate Source Threshold Voltage Max3.75V
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STQ1NK60ZR-AP is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- 100% Avalanche tested
- Extremely high dV/dt capability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
13ohm
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
400mA
Drain Source On State Resistance
13ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
3W
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability