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STQ2HNK60ZR-AP
MOSFET, N-CH, 600V, 0.5A, TO-92
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTQ2HNK60ZR-AP
Newark Part No.64AH8860
Product RangeSuperMESH
Your Part Number
483 In Stock
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Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.410 |
| 10+ | $1.120 |
| 100+ | $0.765 |
| 500+ | $0.658 |
| 1000+ | $0.572 |
| 4000+ | $0.470 |
| 10000+ | $0.447 |
Price for:Each
Minimum: 5
Multiple: 5
$7.05
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTQ2HNK60ZR-AP
Newark Part No.64AH8860
Product RangeSuperMESH
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id500mA
On Resistance Rds(on)4.4ohm
Drain Source On State Resistance4.8ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation3W
Power Dissipation Pd3W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSuperMESH
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
4.4ohm
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Power Dissipation
3W
No. of Pins
3Pins
Product Range
SuperMESH
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source On State Resistance
4.8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
Power Dissipation Pd
3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability