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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW70N60DM2
Newark Part No.79Y9483
Technical Datasheet
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Quantity | Price |
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1+ | $11.070 |
10+ | $11.070 |
25+ | $11.070 |
60+ | $10.150 |
120+ | $10.150 |
270+ | $10.150 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW70N60DM2
Newark Part No.79Y9483
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id66A
Drain Source On State Resistance0.037ohm
On Resistance Rds(on)0.037ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd446W
Power Dissipation446W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
- 600V, 66A N-channel MDmesh™ DM2 power MOSFET in 3 pin TO-247 package
- Fast recovery body diode
- Extremely low gate charge and input capacitance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener protected
- Suitable for switching applications
- Very low recovery charge (Qrr) and time (trr) combined with low RDS(on Low on-resistance
- Suitable for the most demanding high efficiency converters
- Ideal for bridge topologies and ZVS phase-shift converters
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.037ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation Pd
446W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
66A
On Resistance Rds(on)
0.037ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation
446W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate