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STWA32N65DM6AG
Power MOSFET, N Channel, 650 V, 37 A, 0.083 ohm, TO-247LL, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTWA32N65DM6AG
Newark Part No.29AK8292
Product RangeMDmesh DM6 Series
Technical Datasheet
210 In Stock
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115 Delivery in 1-3 Business Days(US stock)
95 Delivery in 2-4 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $7.220 |
| 10+ | $7.220 |
| 25+ | $6.620 |
| 50+ | $6.620 |
| 100+ | $6.620 |
| 250+ | $6.620 |
| 500+ | $6.110 |
Price for:Each
Minimum: 1
Multiple: 1
$7.22
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTWA32N65DM6AG
Newark Part No.29AK8292
Product RangeMDmesh DM6 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id37A
On Resistance Rds(on)0.083ohm
Drain Source On State Resistance0.083ohm
Transistor Case StyleTO-247LL
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd320W
Power Dissipation320W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh DM6 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.083ohm
Transistor Case Style
TO-247LL
Rds(on) Test Voltage
10V
Power Dissipation Pd
320W
No. of Pins
3Pins
Product Range
MDmesh DM6 Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
N Channel
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.083ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation
320W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate