Print Page
VNN1NV04PTR-E
Power MOSFET, N Channel, 45 V, 1.7 A, 0.25 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoVNN1NV04PTR-E
Newark Part No.06X1145
Technical Datasheet
3,999 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.743 |
| 10+ | $0.743 |
| 25+ | $0.681 |
| 50+ | $0.681 |
| 100+ | $0.681 |
| 250+ | $0.629 |
| 500+ | $0.628 |
| 1000+ | $0.628 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.74
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoVNN1NV04PTR-E
Newark Part No.06X1145
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds45V
Continuous Drain Current Id1.7A
Drain Source On State Resistance0.25ohm
On Resistance Rds(on)0.25ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd7W
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max500mV
Power Dissipation7W
No. of Pins4Pins
Operating Temperature Max-
Product Range-
Qualification-
Product Overview
The VNN1NV04PTR-E is a 45V Fully Auto Protected Power MOSFET designed in VIPower M0 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
- Linear current limitation
- Thermal shutdown
- Short-circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the power MOSFET (analogue driving)
- Compatible with standard power MOSFET
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
45V
Drain Source On State Resistance
0.25ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
7W
Gate Source Threshold Voltage Max
500mV
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
1.7A
On Resistance Rds(on)
0.25ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Power Dissipation
7W
Operating Temperature Max
-
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
Alternatives for VNN1NV04PTR-E
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate