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SSM3J56MFV,L3F(T
Power MOSFET, P Channel, 20 V, 800 mA, 0.39 ohm, SOT-723, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoSSM3J56MFV,L3F(T
Newark Part No.
Re-Reel09AK7966
Cut Tape09AK7966
Your Part Number
Technical Datasheet
5,210 In Stock
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Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.444 |
| 10+ | $0.283 |
| 25+ | $0.231 |
| 50+ | $0.181 |
| 100+ | $0.130 |
| 250+ | $0.121 |
| 500+ | $0.112 |
| 1000+ | $0.103 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoSSM3J56MFV,L3F(T
Newark Part No.
Re-Reel09AK7966
Cut Tape09AK7966
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id800mA
On Resistance Rds(on)0.31ohm
Drain Source On State Resistance0.39ohm
Transistor Case StyleSOT-723
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation Pd150mW
Power Dissipation150mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.31ohm
Transistor Case Style
SOT-723
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
150mW
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Channel Type
P Channel
Continuous Drain Current Id
800mA
Drain Source On State Resistance
0.39ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation
150mW
Operating Temperature Max
150°C
Qualification
-
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate