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TPN22006NH,LQ(S
Power MOSFET, N Channel, 60 V, 21 A, 0.018 ohm, TSON, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.175 |
| 10+ | $0.175 |
| 25+ | $0.175 |
| 50+ | $0.175 |
| 100+ | $0.175 |
| 250+ | $0.175 |
| 500+ | $0.175 |
| 1000+ | $0.175 |
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Multiple: 1
$0.18
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPN22006NH,LQ(S
Newark Part No.09AK8999
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id21A
On Resistance Rds(on)0.018ohm
Drain Source On State Resistance0.018ohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd18W
Power Dissipation18W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.018ohm
Transistor Case Style
TSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
18W
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
18W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate