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XPH2R608QB,L1XHQ(O
MOSFET, N-CH, 80V, 120A, WFSOP ADVANCE
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoXPH2R608QB,L1XHQ(OCopy
Manufacturer Standard Lead Time24 weeks
Newark Part No.12AN1225
Product RangeU-MOSX-H Series
Your Part Number
4,900 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $4.350 |
| 50+ | $3.820 |
| 100+ | $3.450 |
| 250+ | $3.080 |
| 500+ | $2.680 |
| 1000+ | $2.300 |
| 2500+ | $2.100 |
| 5000+ | $1.990 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$4.35
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoXPH2R608QB,L1XHQ(OCopy
Manufacturer Standard Lead Time24 weeks
Newark Part No.12AN1225
Product RangeU-MOSX-H Series
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id120A
Drain Source On State Resistance0.00255ohm
Transistor Case StyleWFSOP Advance
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation170W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeU-MOSX-H Series
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
WFSOP Advance
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.00255ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
8Pins
Product Range
U-MOSX-H Series
SVHC
No SVHC (04-Feb-2026)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate