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XSM6K361NW,LXHF(A
MOSFET, N-CH, 100V, 3.5A, WFDFN2020B
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoXSM6K361NW,LXHF(ACopy
Manufacturer Standard Lead Time16 weeks
Newark Part No.12AN1230
Product RangeU-MOSVIII-H Series
Your Part Number
3,000 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.130 |
| 50+ | $0.920 |
| 100+ | $0.813 |
| 250+ | $0.724 |
| 500+ | $0.620 |
| 1000+ | $0.545 |
| 2500+ | $0.431 |
| 5000+ | $0.414 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.13
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoXSM6K361NW,LXHF(ACopy
Manufacturer Standard Lead Time16 weeks
Newark Part No.12AN1230
Product RangeU-MOSVIII-H Series
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.5A
Drain Source On State Resistance0.069ohm
Transistor Case StyleWFDFN2020B
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.84W
No. of Pins6Pins
Operating Temperature Max175°C
Product RangeU-MOSVIII-H Series
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.5A
Transistor Case Style
WFDFN2020B
Rds(on) Test Voltage
10V
Power Dissipation
1.84W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.069ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
6Pins
Product Range
U-MOSVIII-H Series
SVHC
No SVHC (25-Jun-2025)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate