Print Page
UF3C065030B3
Silicon Carbide MOSFET, Single, N Channel, 65 A, 650 V, 27 mohm, D2PAK
Image is for illustrative purposes only. Please refer to product description.
223 In Stock
Need more?
200 Delivery in 1-3 Business Days(US stock)
23 Delivery in 2-4 Business Days(UK stock)
Order before 9pm
| Quantity | Price |
|---|---|
| 1+ | $33.670 |
| 10+ | $32.130 |
| 25+ | $30.570 |
| 50+ | $29.170 |
| 100+ | $28.000 |
| 250+ | $27.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$33.67
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3C065030B3
Newark Part No.47AK1745
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id65A
Drain Source Voltage Vds650V
Drain Source On State Resistance27mohm
On Resistance Rds(on)0.027ohm
Transistor Case StyleD2PAK
No. of Pins3Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd242W
Power Dissipation242W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.027ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5V
Power Dissipation
242W
Product Range
-
Transistor Polarity
N Channel
Continuous Drain Current Id
65A
Drain Source On State Resistance
27mohm
Transistor Case Style
D2PAK
Rds(on) Test Voltage
12V
Power Dissipation Pd
242W
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate