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UF3SC065007K4S
Silicon Carbide MOSFET, Single, N Channel, 120 A, 650 V, 0.0067 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $73.660 |
| 5+ | $73.660 |
| 10+ | $73.660 |
| 25+ | $73.660 |
Price for:Each
Minimum: 1
Multiple: 1
$73.66
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Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3SC065007K4S
Newark Part No.47AK1764
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id120A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.0067ohm
On Resistance Rds(on)0.0067ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max4.7V
Power Dissipation789W
Power Dissipation Pd789W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.0067ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.7V
Power Dissipation Pd
789W
Product Range
-
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
Drain Source On State Resistance
0.0067ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
12V
Power Dissipation
789W
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate