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IRFBE30LPBF
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-262, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $2.090 |
| 2500+ | $1.880 |
Price for:Each
Minimum: 1000
Multiple: 1000
$2,090.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFBE30LPBF
Newark Part No.63J6694
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4.1A
On Resistance Rds(on)3ohm
Drain Source On State Resistance3ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd125W
Transistor Case StyleTO-262
Gate Source Threshold Voltage Max4V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
3ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
4.1A
Drain Source On State Resistance
3ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-262
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate