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IRFIBF20GPBF
Power MOSFET, N Channel, 900 V, 1.2 A, 8 ohm, TO-220, Through Hole
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900 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.060 |
| 10+ | $2.060 |
| 25+ | $1.910 |
| 50+ | $1.910 |
| 100+ | $1.910 |
| 500+ | $1.900 |
| 1000+ | $1.900 |
| 2500+ | $1.770 |
Price for:Each
Minimum: 1
Multiple: 1
$2.06
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFIBF20GPBF
Newark Part No.63J6734
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id1.2A
Drain Source On State Resistance8ohm
On Resistance Rds(on)8ohm
Transistor MountingThrough Hole
Power Dissipation Pd30W
Rds(on) Test Voltage10V
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max4V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
900V
Drain Source On State Resistance
8ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
1.2A
On Resistance Rds(on)
8ohm
Power Dissipation Pd
30W
Transistor Case Style
TO-220
Power Dissipation
30W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability