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IRFPF50PBF
Power MOSFET, N Channel, 900 V, 6.7 A, 1.6 ohm, TO-247, Through Hole
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500 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $10.000 |
| 10+ | $8.650 |
| 25+ | $8.210 |
| 50+ | $7.750 |
| 100+ | $7.300 |
| 250+ | $7.000 |
| 500+ | $6.680 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFPF50PBF
Newark Part No.63J6820
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id6.7A
On Resistance Rds(on)1.6ohm
Drain Source On State Resistance1.6ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd190W
Transistor Case StyleTO-247
Gate Source Threshold Voltage Max2V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The IRFPF50PBF is a 900V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Easy to parallel
- Simple drive requirement
- Isolated central mounting hole
- Fast switching
- 175°C Operating temperature
Applications
Power Management, Commercial, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
900V
On Resistance Rds(on)
1.6ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
190W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Channel Type
N Channel
Continuous Drain Current Id
6.7A
Drain Source On State Resistance
1.6ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-247
Power Dissipation
190W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability