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IRFS9N60APBF
Power MOSFET, N Channel, 600 V, 9.2 A, 0.75 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoIRFS9N60APBF
Newark Part No.56AJ9904
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 1+ | $4.440 |
| 10+ | $2.850 |
| 25+ | $2.810 |
| 50+ | $2.760 |
| 100+ | $2.710 |
| 500+ | $2.710 |
| 1000+ | $2.700 |
Price for:Each
Minimum: 1
Multiple: 1
$4.44
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFS9N60APBF
Newark Part No.56AJ9904
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id9.2A
Drain Source On State Resistance0.75ohm
On Resistance Rds(on)0.75ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation170W
Power Dissipation Pd170W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.75ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
170W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
9.2A
On Resistance Rds(on)
0.75ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
170W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate