Print Page
IRLZ44PBF
Power MOSFET, N Channel, 60 V, 50 A, 0.028 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
48 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
| Quantity | Price |
|---|---|
| 1+ | $2.170 |
| 10+ | $2.000 |
| 25+ | $2.000 |
| 50+ | $1.860 |
| 100+ | $1.860 |
| 500+ | $1.730 |
| 1000+ | $1.700 |
Price for:Each
Minimum: 1
Multiple: 1
$2.17
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLZ44PBF
Newark Part No.63J7713
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance0.028ohm
On Resistance Rds(on)0.028ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Power Dissipation Pd150W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max2V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRLZ44PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- Logic-level gate drive
- RDS (ON) Specified at VGS = 4 and 5V
- -55 to 175°C Operating temperature range
- Ease of paralleling
- Simple drive requirements
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
150W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.028ohm
Rds(on) Test Voltage
5V
Transistor Case Style
TO-220
Power Dissipation
150W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability