Print Page
SI1902CDL-T1-GE3.
Dual MOSFET, Dual N Channel, 20 V, 1.1 A, 23.5 mohm
Image is for illustrative purposes only. Please refer to product description.
57,000 In Stock
Need more?
Delivery in 2-4 Business Days
Need more?
| Quantity | Price |
|---|---|
| 1+ | $0.265 |
| 5000+ | $0.252 |
| 10000+ | $0.227 |
| 20000+ | $0.208 |
| 30000+ | $0.195 |
| 50000+ | $0.181 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$795.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1902CDL-T1-GE3.
Newark Part No.23AC9590
Technical Datasheet
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id1.1A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel1.1A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel23.5mohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel420mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
Dual N Channel
Continuous Drain Current Id
1.1A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
1.1A
Drain Source On State Resistance N Channel
23.5mohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
420mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate