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SI2302CDS-T1-GE3.
Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount
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12,000 In Stock
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| Quantity | Price |
|---|---|
| 3000+ | $0.202 |
| 6000+ | $0.201 |
| 12000+ | $0.192 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$606.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302CDS-T1-GE3.
Newark Part No.28AC2121
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.9A
On Resistance Rds(on)0.045ohm
Drain Source On State Resistance0.045ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Power Dissipation Pd710mW
Transistor Case StyleTO-236
Gate Source Threshold Voltage Max850mV
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
Product Overview
The SI2302CDS-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
710mW
Gate Source Threshold Voltage Max
850mV
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
2.9A
Drain Source On State Resistance
0.045ohm
Rds(on) Test Voltage
2.5V
Transistor Case Style
TO-236
Power Dissipation
710mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate