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SI2305CDS-T1-GE3
Power MOSFET, P Channel, 8 V, 5.8 A, 0.035 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.550 |
| 25+ | $0.317 |
| 50+ | $0.272 |
| 100+ | $0.226 |
| 250+ | $0.212 |
| 500+ | $0.198 |
| 1000+ | $0.175 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2305CDS-T1-GE3
Newark Part No.49AM0101
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id5.8A
Drain Source On State Resistance0.035ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
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