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SI2307CDS-T1-GE3
MOSFET, P-CH, 30V, 2.7A, TO-236 ROHS COMPLIANT: YES
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18,000 In Stock
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Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 3000+ | $0.284 |
| 6000+ | $0.281 |
| 12000+ | $0.265 |
| 18000+ | $0.263 |
| 30000+ | $0.256 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$852.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2307CDS-T1-GE3
Newark Part No.96AJ0107
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.7A
Drain Source On State Resistance0.088ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3V
Power Dissipation1.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.7A
Transistor Case Style
TO-236
Rds(on) Test Voltage
20V
Power Dissipation
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.088ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability