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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2328DS-T1-GE3
Newark Part No.63W4142
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.5A
On Resistance Rds(on)0.195ohm
Drain Source On State Resistance0.25ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Power Dissipation Pd1.25W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.195ohm
Transistor Case Style
TO-236
Power Dissipation Pd
1.25W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
1.5A
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Alternatives for SI2328DS-T1-GE3
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2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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