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SI2356DS-T1-GE3
MOSFET, N-CH, 40V, 4.3A, SOT-23
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9,000 In Stock
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| Quantity | Price |
|---|---|
| 3000+ | $0.208 |
| 6000+ | $0.196 |
| 12000+ | $0.184 |
| 18000+ | $0.177 |
| 30000+ | $0.169 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$624.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2356DS-T1-GE3
Newark Part No.05AC9483
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id4.3A
On Resistance Rds(on)0.042ohm
Drain Source On State Resistance0.051ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation1.7W
Power Dissipation Pd1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.042ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
4.3A
Drain Source On State Resistance
0.051ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability