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| Quantity | Price |
|---|---|
| 1+ | $0.994 |
| 10+ | $0.647 |
| 25+ | $0.579 |
| 50+ | $0.511 |
| 100+ | $0.442 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3417DV-T1-GE3
Newark Part No.57AJ0432
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8A
Drain Source On State Resistance0.021ohm
On Resistance Rds(on)0.021ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation4.2W
Power Dissipation Pd4.2W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.021ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Power Dissipation
4.2W
No. of Pins
6Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.021ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
4.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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Product Compliance Certificate
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