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SI3456DDV-T1-GE3
Power MOSFET, N Channel, 30 V, 6.3 A, 0.04 ohm, TSOP, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.257 |
| 5000+ | $0.244 |
| 10000+ | $0.219 |
| 20000+ | $0.199 |
| 30000+ | $0.188 |
| 50000+ | $0.175 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$771.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3456DDV-T1-GE3
Newark Part No.15R4943
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6.3A
On Resistance Rds(on)0.033ohm
Drain Source On State Resistance0.04ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.7W
Gate Source Threshold Voltage Max1.2V
Transistor Case StyleTSOP
Power Dissipation1.7W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications.
- Halogen-free
- -55 to 150°C Operating temperature range
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.033ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.7W
Transistor Case Style
TSOP
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
6.3A
Drain Source On State Resistance
0.04ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate