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SI4190ADY-T1-GE3
Power MOSFET, N Channel, 100 V, 18.4 A, 0.0088 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $1.320 |
| 4000+ | $1.190 |
| 6000+ | $1.150 |
| 10000+ | $1.100 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$3,300.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4190ADY-T1-GE3
Newark Part No.99W9617
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id18.4A
Drain Source On State Resistance0.0088ohm
On Resistance Rds(on)0.0073ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd6W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.5V
Power Dissipation6W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0088ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
6W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
18.4A
On Resistance Rds(on)
0.0073ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
6W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate